Publication:

Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET

Date

2019
Journal article
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dc.contributor.authorMols, Yves
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorFavia, Paola
dc.contributor.authorLagrain, Pieter
dc.contributor.authorGuo, Weiming
dc.contributor.authorBender, Hugo
dc.contributor.authorKunert, Bernardette
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorLagrain, Pieter
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLagrain, Pieter::0000-0003-3734-7203
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.date.accessioned2021-10-27T14:15:28Z
dc.date.available2021-10-27T14:15:28Z
dc.date.issued2019
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33615
dc.identifier.urlhttps://doi.org/10.1063/1.5096015
dc.source.beginpage245107-1
dc.source.endpage245107-10
dc.source.issue24
dc.source.journalJournal of Applied Physics
dc.source.volume125
dc.title

Structural analysis and resistivity measurements of InAs and GaSb fins on 300 mm Si for vertical (T)FET

dc.typeJournal article
dspace.entity.typePublication
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