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Gate-source-drain architecture impact on DC and performance of sub-100-nm elevated source/drain NMOS transistors

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dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGrau, Lluis
dc.contributor.authorLinten, Dimitri
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorRooyackers, Rita
dc.contributor.authorWambacq, Piet
dc.contributor.authorBadenes, Gonçal
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorWambacq, Piet
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.date.accessioned2021-10-15T05:01:11Z
dc.date.available2021-10-15T05:01:11Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7688
dc.source.beginpage610
dc.source.endpage617
dc.source.issue3
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume50
dc.title

Gate-source-drain architecture impact on DC and performance of sub-100-nm elevated source/drain NMOS transistors

dc.typeJournal article
dspace.entity.typePublication
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