Publication:

On the efficiency of stress techniques in gate-last n-type bulk FinFETs

Date

2012
Journal article
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dc.contributor.authorEneman, Geert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorVeloso, Anabela
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T10:54:09Z
dc.date.available2021-10-20T10:54:09Z
dc.date.issued2012
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20652
dc.source.beginpage19
dc.source.endpage24
dc.source.journalSolid-State Electronics
dc.source.volume74
dc.title

On the efficiency of stress techniques in gate-last n-type bulk FinFETs

dc.typeJournal article
dspace.entity.typePublication
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