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Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
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Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
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Date
2022
Proceedings Paper
https://doi.org/10.1109/IRPS48227.2022.9764592
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Millesimo, M.
;
Bakeroot, Benoit
;
Borga, Matteo
;
Posthuma, Niels
;
Decoutere, Stefaan
;
Sangiorgi, E.
;
Fiegna, C.
;
Tallarico, A. N.
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na
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1365
since deposited on 2023-02-27
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Acq. date: 2025-12-12
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Metrics
Views
1365
since deposited on 2023-02-27
1
last month
Acq. date: 2025-12-12
Citations