Publication:

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

 
dc.contributor.authorMillesimo, M.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorBorga, Matteo
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorSangiorgi, E.
dc.contributor.authorFiegna, C.
dc.contributor.authorTallarico, A. N.
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2023-06-01T13:39:37Z
dc.date.available2023-02-27T03:28:35Z
dc.date.available2023-06-01T13:39:37Z
dc.date.issued2022
dc.description.wosFundingTextThis activity was funded under project iRel40. iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking (JU) under grant agreement No 876659. The funding of the project comes from the Horizon 2020 research programme and participating countries. National funding is provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, the Netherlands, Slovakia, Spain, Sweden, and Turkey. This project is co-funded by the Ministry of Economic Development in Italy.
dc.identifier.doi10.1109/IRPS48227.2022.9764592
dc.identifier.eisbn978-1-6654-7950-9
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41180
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 27-31, 2022
dc.source.conferencelocationDallas
dc.source.journalna
dc.source.numberofpages6
dc.subject.keywordsPERCOLATION THEORY
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsV-TH
dc.subject.keywordsBREAKDOWN
dc.subject.keywordsTECHNOLOGY
dc.title

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

dc.typeProceedings paper
dspace.entity.typePublication
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