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Trap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctions

Date

2018-06
Proceedings Paper
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dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorMerckling, Clement
dc.contributor.authorMols, Yves
dc.contributor.authorAlian, AliReza
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-25T19:58:16Z
dc.date.available2021-10-25T19:58:16Z
dc.date.issued2018-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30911
dc.source.conferenceExtended Defects in Semiconductors - EDS
dc.source.conferencedate24/06/2018
dc.source.conferencelocationSanta Clara, CA USA
dc.title

Trap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctions

dc.typeProceedings paper
dspace.entity.typePublication
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