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Conference contributions
Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs
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Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Stesmans, Andre
;
Afanasiev, Valeri
;
Martens, Koen
;
Aoulaiche, Marc
;
Grasser, Tibor
;
Mitard, Jerome
;
Groeseneken, Guido
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1833
since deposited on 2021-10-17
Acq. date: 2025-12-15
Citations
Metrics
Views
1833
since deposited on 2021-10-17
Acq. date: 2025-12-15
Citations