Publication:

Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

Date

2009
Meeting abstract
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorMartens, Koen
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorGrasser, Tibor
dc.contributor.authorMitard, Jerome
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-17T22:16:35Z
dc.date.available2021-10-17T22:16:35Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15322
dc.source.conference40th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate3/12/2009
dc.source.conferencelocationArlington, VA US
dc.title

Impact of Si-passivation thickness and processing on NBTI reliability of Ge and SiGe pMOSFETs

dc.typeMeeting abstract
dspace.entity.typePublication
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