Publication:

Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

Date

2008-10
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorBellenger, Florence
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T06:16:42Z
dc.date.available2021-10-17T06:16:42Z
dc.date.embargo9999-12-31
dc.date.issued2008-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13367
dc.source.beginpage411
dc.source.conferencePhysics and Technology of High-k Dielectrics 6
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage422
dc.title

Interface properties improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 gate stacks using molecular beam deposition

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
16747.pdf
Size:
585.8 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions