Publication:

Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR

Date

2012
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLeys, Maarten
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorNguyen, A.P.D.
dc.contributor.authorStesmans, Andre
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.date.accessioned2021-10-20T16:12:42Z
dc.date.available2021-10-20T16:12:42Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0031-8965
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21519
dc.source.beginpage1851
dc.source.endpage1856
dc.source.issue10
dc.source.journalPhysica Status Solidi A
dc.source.volume209
dc.title

Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR

dc.typeJournal article
dspace.entity.typePublication
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