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Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

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dc.contributor.authorUlyashin, A.
dc.contributor.authorJob, R.
dc.contributor.authorFahrner, W.
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGrambole, D.
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T23:25:56Z
dc.date.available2021-10-14T23:25:56Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6898
dc.source.beginpage13037
dc.source.endpage13045
dc.source.issue48
dc.source.journalJournal of Physics - Condensed Matter
dc.source.volume14
dc.title

Substrate orientation, doping and plasma frequency dependencies of structural defect formation in hydrogen plasma treated silicon

dc.typeJournal article
dspace.entity.typePublication
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