Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

Abstract

Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges. A new DRAM bit cell without a capacitor and with two thin-film transistors — each with an oxide semiconductor channel such as indium-gallium-zinc-oxide — shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM.