Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Kim, Donguk; Kim, Je-Hyuk; Choi, Woo Sik; Yang, Tae Jun; Jang, Jun Tae; Belmonte, Attilio; Rassoul, Nouredine; Subhechha, Subhali; Delhougne, Romain; Kar, Gouri Sankar; Lee, Wonsok; Cho, Min Hee; Ha, Daewon; Kim, Dae Hwan

doi:10.1038/s41598-022-23951-x

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Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

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2022

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https://doi.org/10.1038/s41598-022-23951-x

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SCIENTIFIC REPORTS

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479 since deposited on 2022-11-28

Acq. date: 2026-06-02

1427 since deposited on 2022-11-28

Acq. date: 2026-06-02

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

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