Publication:
Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
Loading...
Journal
Abstract
Description
Statistics
Downloads
437 since deposited on 2022-11-28
45last month
12last week
Acq. date: 2026-04-07
Views
1427 since deposited on 2022-11-28
1last month
Acq. date: 2026-04-07
Citations
Statistics
Downloads
437 since deposited on 2022-11-28
45last month
12last week
Acq. date: 2026-04-07
Views
1427 since deposited on 2022-11-28
1last month
Acq. date: 2026-04-07
Citations