Publication:

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Date

2022
Journal article
https://doi.org/10.1038/s41598-022-23951-x
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dc.contributor.authorKim, Donguk
dc.contributor.authorKim, Je-Hyuk
dc.contributor.authorChoi, Woo Sik
dc.contributor.authorYang, Tae Jun
dc.contributor.authorJang, Jun Tae
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorDelhougne, Romain
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorLee, Wonsok
dc.contributor.authorCho, Min Hee
dc.contributor.authorHa, Daewon
dc.contributor.authorKim, Dae Hwan
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.date.accessioned2023-03-30T10:47:43Z
dc.date.available2022-11-28T03:11:41Z
dc.date.available2023-03-30T10:47:43Z
dc.date.embargo2022-11-12
dc.date.issued2022
dc.description.wosFundingTextThis work was supported in part by Samsung Electronics Co., Ltd under Grant IO200424-07306-01, in part by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (MSIT) of Korea Government under Grant 2016R1A5A1012966 and 2020R1A2B5B01001979, and in part by the Institute of Information and Communications Technology Planning and Evaluation (IITP) funded by the Korea government (MSIT) under grant 2021-0-01764. Submicron IGZO FET samples was fabricated by imec. TCAD simulation was supported by SILVACO. The EDA tool was supported by the IC Design Education Center (IDEC), south Korea.
dc.identifier.doi10.1038/s41598-022-23951-x
dc.identifier.issn2045-2322
dc.identifier.pmidMEDLINE:36371536
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40793
dc.publisherNATURE PORTFOLIO
dc.source.beginpageArt. 19380
dc.source.endpagena
dc.source.issuena
dc.source.journalSCIENTIFIC REPORTS
dc.source.numberofpages13
dc.source.volume12
dc.subject.keywordsTHIN-FILM TRANSISTORS
dc.subject.keywordsGATE
dc.title

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

dc.typeJournal article
dspace.entity.typePublication
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