Low-frequency noise assessment of the oxide quality of gate-last high-k pMOSFETS

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Veloso, Anabela
dc.contributor.author	Horiguchi, Naoto
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Veloso, Anabela
dc.contributor.imecauthor	Horiguchi, Naoto
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Horiguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned	2021-10-20T16:11:42Z
dc.date.available	2021-10-20T16:11:42Z
dc.date.embargo	9999-12-31
dc.date.issued	2012
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21517
dc.identifier.url	http://ieeexplore.ieee.org/document/6296681/
dc.source.beginpage	1366
dc.source.endpage	1368
dc.source.issue	10
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	33
dc.title	Low-frequency noise assessment of the oxide quality of gate-last high-k pMOSFETS
dc.type	Journal article
dspace.entity.type	Publication
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