Publication:

High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing

Date

2011
Journal article
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dc.contributor.authorXie, Qi
dc.contributor.authorDeng, Shaoren
dc.contributor.authorSchaekers, Marc
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorJiang, Yu-long
dc.contributor.authorQu, Xin-Pin
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDetavemier, Christophe
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorDeng, Shaoren
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-19T21:55:58Z
dc.date.available2021-10-19T21:55:58Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20162
dc.source.beginpage1656
dc.source.endpage1658
dc.source.issue12
dc.source.journalIEEE Electron Device Letters
dc.source.volume32
dc.title

High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing

dc.typeJournal article
dspace.entity.typePublication
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