Publication:

Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

Date

2004
Proceedings Paper
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dc.contributor.authorRothschild, Aude
dc.contributor.authorKraus, P.A.
dc.contributor.authorChua, T.C.
dc.contributor.authorNouri, F.
dc.contributor.authorCubaynes, Florence
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMertens, Sofie
dc.contributor.authorDate, Lucien
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorSchaekers, Marc
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-15T15:55:10Z
dc.date.available2021-10-15T15:55:10Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9529
dc.source.beginpage49
dc.source.conferenceIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
dc.source.conferencedate10/04/2004
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage53
dc.title

Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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