Publication:

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3098-3266
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-2204-9636
cris.virtual.orcid0000-0003-0211-0847
cris.virtual.orcid0000-0002-5956-6485
cris.virtual.orcid0000-0003-3545-3424
cris.virtual.orcid0000-0001-9247-0090
cris.virtual.orcid0000-0002-6864-2603
cris.virtualsource.department723101cf-d335-49eb-9842-31c6340addfd
cris.virtualsource.departmentac970577-14d8-401d-8a09-e2e81baa0fa7
cris.virtualsource.departmente05093c4-13d7-446c-80d9-9d5407875f83
cris.virtualsource.department0a1de370-95a1-4a1e-a13d-6497d6c558a1
cris.virtualsource.department0358e3bf-104e-431c-a10d-62c71b36f250
cris.virtualsource.departmentc1bbf7c6-fe00-4d3e-9b77-5ac76d18c50a
cris.virtualsource.department5345513e-14d5-47e9-a494-1dda4ed18864
cris.virtualsource.department802fe4ec-2cc9-4395-9e66-18049db55e52
cris.virtualsource.department7e7a618e-97a3-467b-86c5-382a18cb69ad
cris.virtualsource.orcid723101cf-d335-49eb-9842-31c6340addfd
cris.virtualsource.orcidac970577-14d8-401d-8a09-e2e81baa0fa7
cris.virtualsource.orcide05093c4-13d7-446c-80d9-9d5407875f83
cris.virtualsource.orcid0a1de370-95a1-4a1e-a13d-6497d6c558a1
cris.virtualsource.orcid0358e3bf-104e-431c-a10d-62c71b36f250
cris.virtualsource.orcidc1bbf7c6-fe00-4d3e-9b77-5ac76d18c50a
cris.virtualsource.orcid5345513e-14d5-47e9-a494-1dda4ed18864
cris.virtualsource.orcid802fe4ec-2cc9-4395-9e66-18049db55e52
cris.virtualsource.orcid7e7a618e-97a3-467b-86c5-382a18cb69ad
dc.contributor.authorPerez Lozano, Daniel
dc.contributor.authorSoulie, Jean-Philippe
dc.contributor.authorHodges, Blake
dc.contributor.authorPiao, Xiaoyu
dc.contributor.authorO'Neal, Sabine
dc.contributor.authorValente-Feliciano, Anne-Marie
dc.contributor.authorHerr, Quentin
dc.contributor.authorTokei, Zsolt
dc.contributor.authorKim, Min-Soo
dc.contributor.authorHerr, Anna
dc.contributor.imecauthorSoulie, Jean-Philippe
dc.contributor.imecauthorPiao, Xiaoyu
dc.contributor.imecauthorHerr, Quentin
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorHerr, Anna
dc.contributor.imecauthorPerez Lozano, Daniel
dc.contributor.imecauthorHodges, Blake
dc.contributor.imecauthorO'Neal, Sabine
dc.contributor.orcidimecSoulie, Jean-Philippe::0000-0002-5956-6485
dc.contributor.orcidimecPiao, Xiaoyu::0000-0002-2204-9636
dc.contributor.orcidimecHerr, Quentin::0000-0002-6864-2603
dc.contributor.orcidimecTokei, Zsolt::0000-0003-3545-3424
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecHerr, Anna::0000-0001-9247-0090
dc.contributor.orcidimecPerez Lozano, Daniel::0000-0003-3098-3266
dc.date.accessioned2025-07-08T08:25:21Z
dc.date.available2024-06-25T18:54:22Z
dc.date.available2025-07-08T08:25:21Z
dc.date.issued2024
dc.identifier.doi10.1088/1361-6668/ad4b61
dc.identifier.issn0953-2048
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44092
dc.publisherIOP Publishing Ltd
dc.source.beginpageArt. 075012
dc.source.endpageN/A
dc.source.issue7
dc.source.journalSUPERCONDUCTOR SCIENCE & TECHNOLOGY
dc.source.numberofpages8
dc.source.volume37
dc.subject.keywordsTEMPERATURE
dc.title

Properties of NbxTi(1-x)N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: