Publication:

Statistical characterization and modeling of drain current local and global variability in 14nm FinFETs

Date

2017
Proceedings Paper
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dc.contributor.authorKaratsori, T.
dc.contributor.authorTheodorou, C.
dc.contributor.authorLavieville, R.
dc.contributor.authorChiarella, Thomas
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorDimitriadis, C.A
dc.contributor.authorGhibaudo, Gérard
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-24T06:38:28Z
dc.date.available2021-10-24T06:38:28Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28641
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7954263/
dc.source.beginpage1
dc.source.conferenceInternational Conference of Microelectronic Test Structures - ICMTS
dc.source.conferencedate28/03/2017
dc.source.conferencelocationGrenoble France
dc.source.endpage5
dc.title

Statistical characterization and modeling of drain current local and global variability in 14nm FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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