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Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment
Publication:
Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment
Date
2012
Meeting abstract
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24828.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Deng, Shaoren
;
Xie, Qi
;
Schaekers, Marc
;
Lin, Dennis
;
Caymax, Matty
;
Delabie, Annelies
;
Van den Berghe, Sven
;
Qu, Xinping
;
Deduytsche, Davy
;
Detavernier, Christophe
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1992
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations
Metrics
Views
1992
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations