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Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment

Date

2012
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dc.contributor.authorDeng, Shaoren
dc.contributor.authorXie, Qi
dc.contributor.authorSchaekers, Marc
dc.contributor.authorLin, Dennis
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan den Berghe, Sven
dc.contributor.authorQu, Xinping
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorDeng, Shaoren
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-20T10:39:42Z
dc.date.available2021-10-20T10:39:42Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20587
dc.source.beginpageO5-01
dc.source.conferenceMaterials for Advanced Metallization - MAM
dc.source.conferencedate11/03/2012
dc.source.conferencelocationGrenoble France
dc.title

Ultralow gate leakage current density of Ge metal-oxide-semiconductor capacitor passivated by in situ N2 plasma pretreatment

dc.typeMeeting abstract
dspace.entity.typePublication
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