Publication:

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

Date

2023
Journal article
https://doi.org/10.1109/TDMR.2023.3240976
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dc.contributor.authorLuo, Xuyi
dc.contributor.authorZhang, En Xia
dc.contributor.authorWang, Peng Fei
dc.contributor.authorLi, Kan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2023-07-03T11:56:57Z
dc.date.available2023-05-07T20:59:46Z
dc.date.available2023-07-03T11:56:57Z
dc.date.embargo9999-12-31
dc.date.issued2023
dc.description.wosFundingTextThis work was supported in part by the U.S.Air Force under Award FA9550-22-1-0012 and Award FA9550-17-1-0046.
dc.identifier.doi10.1109/TDMR.2023.3240976
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41575
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage153
dc.source.endpage161
dc.source.issue1
dc.source.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.source.numberofpages9
dc.source.volume23
dc.subject.keywordsTHERMALLY-STIMULATED-CURRENT
dc.subject.keywords1/F NOISE
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsACTIVATION-ENERGIES
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsMOS DEVICES
dc.subject.keywordsDEFECTS
dc.subject.keywordsOXIDE
dc.subject.keywordsSI
dc.subject.keywordsKINETICS
dc.title

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

dc.typeJournal article
dspace.entity.typePublication
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