Publication:
Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
Date
| dc.contributor.author | Rudenko, Tamara | |
| dc.contributor.author | Collaert, Nadine | |
| dc.contributor.author | De Gendt, Stefan | |
| dc.contributor.author | Kilchytska, V. | |
| dc.contributor.author | Jurczak, Gosia | |
| dc.contributor.author | Flandre, Denis | |
| dc.contributor.imecauthor | Collaert, Nadine | |
| dc.contributor.imecauthor | De Gendt, Stefan | |
| dc.contributor.imecauthor | Jurczak, Gosia | |
| dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
| dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
| dc.date.accessioned | 2021-10-16T04:42:24Z | |
| dc.date.available | 2021-10-16T04:42:24Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11140 | |
| dc.source.beginpage | 386 | |
| dc.source.endpage | 389 | |
| dc.source.journal | Microelectronic Engineering | |
| dc.source.volume | 80 | |
| dc.title | Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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