Publication:

Energy band alignment in MoS<sub>2</sub>/HfO<sub>2</sub>: Transfer-related artifacts and interfacial effects

Date

2025-JUN 28
Journal article
https://doi.org/10.1063/5.0279067
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dc.contributor.authorShlyakhov, I.
dc.contributor.authorIakoubovskii, K.
dc.contributor.authorLin, D.
dc.contributor.authorAsselberghs, I.
dc.contributor.authorGaur, A.
dc.contributor.authorDelie, G.
dc.contributor.authorAfanas'ev, V.
dc.contributor.imecauthorLin, D.
dc.contributor.imecauthorAsselberghs, I.
dc.contributor.imecauthorDelie, G.
dc.contributor.imecauthorAfanas'ev, V.
dc.date.accessioned2025-07-08T04:01:46Z
dc.date.available2025-07-08T04:01:46Z
dc.date.issued2025-JUN 28
dc.description.wosFundingTextThe work at KULeuven received partial support from Flanders Innovation & Entrepreneurship [2Dfun (2D functional MX2/graphene hetero-structures), an ERA-NET project in the framework of the EU Graphene Flagship], and from KU Leuven Internal Fund (Project No. C14/16/061).
dc.identifier.doi10.1063/5.0279067
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45882
dc.publisherAIP Publishing
dc.source.issue24
dc.source.journalJOURNAL OF APPLIED PHYSICS
dc.source.numberofpages9
dc.source.volume137
dc.subject.keywordsINTERNAL PHOTOEMISSION
dc.subject.keywordsBARRIER HEIGHT
dc.subject.keywordsMOS2
dc.subject.keywordsTRANSISTORS
dc.subject.keywordsMONOLAYER
dc.subject.keywordsELECTRONS
dc.subject.keywordsDEFECTS
dc.subject.keywordsSILICON
dc.title

Energy band alignment in MoS2/HfO2: Transfer-related artifacts and interfacial effects

dc.typeJournal article
dspace.entity.typePublication
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