Publication:

Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition

Date

2022
Journal article
https://doi.org/10.1063/5.0106132
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dc.contributor.authorNye, Rachel
dc.contributor.authorSong, Seung Keun
dc.contributor.authorVan Dongen, Kaat
dc.contributor.authorDelabie, Annelies
dc.contributor.authorParsons, Gregory N.
dc.contributor.imecauthorNye, Rachel
dc.contributor.imecauthorVan Dongen, Kaat
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.date.accessioned2023-05-25T13:09:43Z
dc.date.available2022-11-20T03:11:54Z
dc.date.available2023-05-25T13:09:43Z
dc.date.embargo2023-08-22
dc.date.issued2022
dc.description.wosFundingTextThis project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking under the Grant Agreement No. 692522. The authors also acknowledge funding from the Semiconductor Research Corporation, Task No. 2974.001. The authors would like to thank Ilse Hoflijk, Thierry Conard, Johan Desmet, and Johan Meersschaut (imec, Belgium) for their discussions involving XPS and RBS characterization and data analysis. Additionally, Jan-Willem Clerix is thanked for his insightful discussions on TiO2 nucleation mechanisms. This work was performed in part at the Analytical Instrumentation Facility (AIF) at North Carolina State University, which is supported by the State of North Carolina and the National Science Foundation (Award No. ECCS-2025064). The AIF is a member of the North Carolina Research Triangle Nanotechnology Network (RTNN), a site in the National Nanotechnology Coordinated Infrastructure (NNCI).
dc.identifier.doi10.1063/5.0106132
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40762
dc.publisherAIP Publishing
dc.source.beginpageArt. 082102
dc.source.endpagena
dc.source.issue8
dc.source.journalAPPLIED PHYSICS LETTERS
dc.source.numberofpages6
dc.source.volume121
dc.subject.keywordsGROWTH
dc.subject.keywordsSILICON
dc.title

Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition

dc.typeJournal article
dspace.entity.typePublication
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