Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

O'Sullivan, Barry; Aoulaiche, Marc; Cho, Moon Ju; Kauerauf, Thomas; Degraeve, Robin; Okawa, Hiroshi; Schram, Tom; Hoffmann, Thomas Y.; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki

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Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

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2009

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Journal of Applied Physics

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1973 since deposited on 2021-10-18

Acq. date: 2026-02-27

Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

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