Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

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Author(s)

O'Sullivan, Barry

;

Aoulaiche, Marc

;

;

Kauerauf, Thomas

;

Degraeve, Robin

;

;

;

Hoffmann, Thomas Y.

;

Groeseneken, Guido

;

Biesemans, Serge

;

Nakabayashi, Takashi

;

;

Journal

Journal of Applied Physics

Metrics

1969 since deposited on 2021-10-18

Acq. date: 2025-10-23