Publication:

Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

Date

2009
Journal article
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorOkawa, Hiroshi
dc.contributor.authorSchram, Tom
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakabayashi, Takashi
dc.contributor.authorIkeda, Atsushi
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.date.accessioned2021-10-18T01:22:09Z
dc.date.available2021-10-18T01:22:09Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15958
dc.source.beginpage114504
dc.source.issue11
dc.source.journalJournal of Applied Physics
dc.source.volume106
dc.title

Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics

dc.typeJournal article
dspace.entity.typePublication
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