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Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics
Publication:
Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics
Date
2003
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Boher, P.
;
Defranoux, C.
;
Bourtault, S.
;
Piel, J.P.
;
Bender, Hugo
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2082
since deposited on 2021-10-15
Acq. date: 2025-10-25
Citations
Metrics
Views
2082
since deposited on 2021-10-15
Acq. date: 2025-10-25
Citations