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Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics

Date

2003
Proceedings Paper
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dc.contributor.authorBoher, P.
dc.contributor.authorDefranoux, C.
dc.contributor.authorBourtault, S.
dc.contributor.authorPiel, J.P.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-10-15T04:02:54Z
dc.date.available2021-10-15T04:02:54Z
dc.date.embargo9999-12-31
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7237
dc.source.beginpage305
dc.source.conferenceAnalytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
dc.source.endpage315
dc.title

Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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