On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.author	Chung, T.M.
dc.contributor.author	Flandre, D.
dc.contributor.author	Raskin, J.P.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-16T19:45:29Z
dc.date.available	2021-10-16T19:45:29Z
dc.date.embargo	9999-12-31
dc.date.issued	2007
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/12904
dc.source.beginpage	919
dc.source.endpage	921
dc.source.issue	10
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	28
dc.title	On the origin of the excess low-frequency noise in graded-channel silicon-on-insulator nMOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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