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Articles
Electrical effect of a single extended defect in MOSFETs: a simulation study
Publication:
Electrical effect of a single extended defect in MOSFETs: a simulation study
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ni, Kai
;
Eneman, Geert
;
Simoen, Eddy
;
Mocuta, Anda
;
Collaert, Nadine
;
Thean, Aaron
;
Schrimpf, Ronald
;
Reed, Robert
;
Fleetwood, Daniel
Journal
IEEE Transactions on Electron Devices
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1922
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Acq. date: 2025-12-10
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Views
1922
since deposited on 2021-10-23
2
last month
Acq. date: 2025-12-10
Citations