Publication:

Electrical effect of a single extended defect in MOSFETs: a simulation study

Date

2016
Journal article
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dc.contributor.authorNi, Kai
dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorFleetwood, Daniel
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T13:15:05Z
dc.date.available2021-10-23T13:15:05Z
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27075
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7506283
dc.source.beginpage3069
dc.source.endpage3075
dc.source.issue8
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Electrical effect of a single extended defect in MOSFETs: a simulation study

dc.typeJournal article
dspace.entity.typePublication
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