Publication:

Single-metal dual-dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

Date

2009
Proceedings Paper
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dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorRohr, Erika
dc.contributor.authorSebaai, Farid
dc.contributor.authorKelkar, Prasad
dc.contributor.authorWada, Masayuki
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKubicek, Stefan
dc.contributor.authorLauwers, Anne
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-18T02:08:38Z
dc.date.available2021-10-18T02:08:38Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16086
dc.source.beginpage49
dc.source.conferenceInternationa l Symposium on VLSI Technology, systems and Applications - VLSI-TSA
dc.source.conferencedate27/04/2009
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage50
dc.title

Single-metal dual-dielectric (SMDD) gate-first CMOS integration towards low VT and high performance

dc.typeProceedings paper
dspace.entity.typePublication
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