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Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique

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dc.contributor.authorRodrigues, Michele
dc.contributor.authorCho, Moon Ju
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-18T02:19:15Z
dc.date.available2021-10-18T02:19:15Z
dc.date.issued2009-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16113
dc.source.beginpage559
dc.source.conference24th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate31/08/2009
dc.source.conferencelocationNatal Brazil
dc.source.endpage565
dc.title

Analysis of the interface trap density in SOI FinFETs with different TiN gate electrode thickness through charge pumping technique

dc.typeProceedings paper
dspace.entity.typePublication
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