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Incubation, time-dependent drift and saturation during Al-Si-Cu electromigration: modelling and implications for design

Date

1998
Proceedings Paper
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dc.contributor.authorWitvrouw, Ann
dc.contributor.authorRoussel, Philippe
dc.contributor.authorBeyer, Gerald
dc.contributor.authorProost, Joris
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-01T09:49:23Z
dc.date.available2021-10-01T09:49:23Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3159
dc.source.beginpage27
dc.source.conferenceProceedings of the IEEE International Interconnect Technology Conference - IITC
dc.source.conferencedate1/06/1998
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage29
dc.title

Incubation, time-dependent drift and saturation during Al-Si-Cu electromigration: modelling and implications for design

dc.typeProceedings paper
dspace.entity.typePublication
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