Publication:

Breakdown investigation in GaN-based MIS-HEMT devices

Date

2014
Proceedings Paper
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dc.contributor.authorMarino, Fabio
dc.contributor.authorBisi, Davide
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorVerzellesi, Giovanni
dc.contributor.authorZanoni, Enrico
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorMeneghesso, Gaudio
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.date.accessioned2021-10-22T03:32:09Z
dc.date.available2021-10-22T03:32:09Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24210
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6948839
dc.source.beginpage377
dc.source.conference44th European Solid-State Device Conference - ESSDERC
dc.source.conferencedate22/09/2014
dc.source.conferencelocationVenize Italy
dc.source.endpage380
dc.title

Breakdown investigation in GaN-based MIS-HEMT devices

dc.typeProceedings paper
dspace.entity.typePublication
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