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Origin of the memory window in organic ferroelectric field-effect transistors
Publication:
Origin of the memory window in organic ferroelectric field-effect transistors
Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kam, Benjamin
;
Li, Xiaoran
;
Cristoferi, Claudio
;
Smits, Edsger C.P.
;
Mityashin, Alexander
;
Ke, Tung Huei
;
Schols, Sarah
;
Genoe, Jan
;
Gelinck, Gerwin
;
Heremans, Paul
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1949
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations
Metrics
Views
1949
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations