Publication:

Origin of the memory window in organic ferroelectric field-effect transistors

Date

2012
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dc.contributor.authorKam, Benjamin
dc.contributor.authorLi, Xiaoran
dc.contributor.authorCristoferi, Claudio
dc.contributor.authorSmits, Edsger C.P.
dc.contributor.authorMityashin, Alexander
dc.contributor.authorKe, Tung Huei
dc.contributor.authorSchols, Sarah
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorKam, Benjamin
dc.contributor.imecauthorKe, Tung Huei
dc.contributor.imecauthorSchols, Sarah
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecKe, Tung Huei::0000-0001-8381-4998
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-20T12:02:38Z
dc.date.available2021-10-20T12:02:38Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20895
dc.source.conferenceMRS Spring Meeting Symposium E: Materials and Physics of Emerging Nonvolatile Memories
dc.source.conferencedate9/04/2012
dc.source.conferencelocationSan Fransisco, CA USA
dc.title

Origin of the memory window in organic ferroelectric field-effect transistors

dc.typeOral presentation
dspace.entity.typePublication
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