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Defects generation in SiO2/HfO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)

Date

2007
Proceedings Paper
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dc.contributor.authorZahid, Mohammed
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorZhang, John
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-16T21:56:23Z
dc.date.available2021-10-16T21:56:23Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13255
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4227609
dc.source.beginpage55
dc.source.conference45th Annual International Reliability Physics Symposium
dc.source.conferencedate15/04/2007
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage60
dc.title

Defects generation in SiO2/HfO2 studied with variable Tcharge-Tdischarge charge pumping (VT2CP)

dc.typeProceedings paper
dspace.entity.typePublication
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