Publication:

Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology

Date

2019
Proceedings Paper
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dc.contributor.authorBlanco, Victor
dc.contributor.authorPaolillo, Sara
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorLariviere, Stephane
dc.contributor.authorLorusso, Gian
dc.contributor.authorDe Poortere, Etienne
dc.contributor.authorTabery, Cyrus
dc.contributor.authorQiao, Fu
dc.contributor.authorLai, Shu-yu
dc.contributor.authorKea, Marc
dc.contributor.authorWang, Luke
dc.contributor.authorSu, Yu Chi
dc.contributor.authorOh, Joe
dc.contributor.authorHuang, Jim
dc.contributor.authorChen, Jimmy
dc.contributor.authorHuang, Jonathan
dc.contributor.imecauthorBlanco, Victor
dc.contributor.imecauthorPaolillo, Sara
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorLariviere, Stephane
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorDe Poortere, Etienne
dc.contributor.imecauthorKea, Marc
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.date.accessioned2021-10-27T07:37:40Z
dc.date.available2021-10-27T07:37:40Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32566
dc.identifier.urlhttps://doi.org/10.1117/12.2536943
dc.source.beginpage11147OB
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography 2019
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMonterey, CA USA
dc.title

Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology

dc.typeProceedings paper
dspace.entity.typePublication
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