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Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects

Date

2016
Proceedings Paper
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dc.contributor.authorPayne, Makonnen
dc.contributor.authorLippy, Steve
dc.contributor.authorLieten, Ruben
dc.contributor.authorKesters, Els
dc.contributor.authorLe, Quoc Toan
dc.contributor.authorMurdoch, Gayle
dc.contributor.authorVega Gonzalez, Victor
dc.contributor.authorHolsteyns, Frank
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorKesters, Els
dc.contributor.imecauthorLe, Quoc Toan
dc.contributor.imecauthorMurdoch, Gayle
dc.contributor.imecauthorVega Gonzalez, Victor
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.orcidimecLe, Quoc Toan::0000-0002-0206-6279
dc.date.accessioned2021-10-23T13:36:34Z
dc.date.available2021-10-23T13:36:34Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27128
dc.identifier.urlhttp://www.scientific.net/SSP.255.232
dc.source.beginpage2323
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIII - UCPSS
dc.source.conferencedate11/09/2016
dc.source.conferencelocationKnokke Belgium
dc.source.endpage236
dc.title

Evaluation of post etch residue cleaning solutions for the removal of TiN hardmask after dry etch of low-k dielectric materials on 45 nm pitch interconnects

dc.typeProceedings paper
dspace.entity.typePublication
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