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Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack

Date

2015
Proceedings Paper
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dc.contributor.authorFang, Wen
dc.contributor.authorSimoen, Eddy
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorThean, Aaron
dc.contributor.authorLuo, Jun
dc.contributor.authorZhao, Chao
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-22T19:13:25Z
dc.date.available2021-10-22T19:13:25Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25263
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288633
dc.source.beginpage1
dc.source.conferenceInternational Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate2/06/2015
dc.source.conferencelocationXi'an China
dc.source.endpage4
dc.title

Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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