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IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers
Publication:
IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers
Date
1996
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kissinger, G.
;
Vanhellemont, Jan
;
Gräf, D.
;
Claeys, Cor
;
Richter, H.
Journal
Abstract
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2013
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations
Metrics
Views
2013
since deposited on 2021-09-29
Acq. date: 2025-10-23
Citations