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IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

Date

1996
Proceedings Paper
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dc.contributor.authorKissinger, G.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorGräf, D.
dc.contributor.authorClaeys, Cor
dc.contributor.authorRichter, H.
dc.date.accessioned2021-09-29T14:39:23Z
dc.date.available2021-09-29T14:39:23Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1300
dc.source.beginpage19
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors 1995 - DRIP. Proceedings of the 6th International Conference
dc.source.conferencedate3/12/1995
dc.source.conferencelocationBoulder, CO USA
dc.source.endpage24
dc.title

IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

dc.typeProceedings paper
dspace.entity.typePublication
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