Publication:

High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization

Date

2010
Proceedings Paper
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dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, Andrew
dc.contributor.authorMyronov, M.
dc.contributor.authorKobayashi, Masaharu
dc.contributor.authorGeypen, Jef
dc.contributor.authorBender, Hugo
dc.contributor.authorVincent, Benjamin
dc.contributor.authorKrom, Raymond
dc.contributor.authorFranco, Jacopo
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorVrancken, Evi
dc.contributor.authorVanherle, Wendy
dc.contributor.authorWang, Wei-E
dc.contributor.authorTseng, Joshua
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorCaymax, Matty
dc.contributor.authorPantisano, Luigi
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorVanherle, Wendy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T19:12:14Z
dc.date.available2021-10-18T19:12:14Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17640
dc.source.beginpage1038
dc.source.conferenceInternational Conference on Solid-State Devices and Materials - SSDM
dc.source.conferencedate22/09/2010
dc.source.conferencelocationTokyo Japan
dc.source.endpage1039
dc.title

High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization

dc.typeProceedings paper
dspace.entity.typePublication
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