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Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

Date

2005
Journal article
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dc.contributor.authorPolspoel, Wouter
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorPetry, Jasmine
dc.contributor.authorConard, Thierry
dc.contributor.authorBenedetti, Alessandro
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorConard, Thierry
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-16T04:10:29Z
dc.date.available2021-10-16T04:10:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11037
dc.source.beginpage436
dc.source.endpage439
dc.source.journalMicroelectronic Engineering
dc.source.volume80
dc.title

Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

dc.typeJournal article
dspace.entity.typePublication
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