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Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence SiGe

Date

2001
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dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorBrijs, Bert
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.date.accessioned2021-10-14T17:03:47Z
dc.date.available2021-10-14T17:03:47Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5356
dc.source.conference13th International Conference on Secondary Ion Mass Spectrometry - SIMS 13; 11-16 November 2001; Nara, Japan.
dc.source.conferencelocation
dc.title

Transient sputter yields, build-up of the altered layer and Ge-segregation as a function of the O2+ ion-fluence SiGe

dc.typeOral presentation
dspace.entity.typePublication
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