Publication:

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients

Date

2008
Journal article
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dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-17T07:33:47Z
dc.date.available2021-10-17T07:33:47Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0957-4522
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13846
dc.source.beginpage161
dc.source.endpage165
dc.source.issue2
dc.source.journalJournal of Materials Science: Materials in Electronics
dc.source.volume19
dc.title

Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients

dc.typeJournal article
dspace.entity.typePublication
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