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Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate
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Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hu, Jie
;
Stoffels, Steve
;
Lenci, Silvia
;
Bakeroot, Benoit
;
De Jaeger, Brice
;
Van Hove, Marleen
;
Liang, Hu
;
Zhao, Ming
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
IEEE Transactions on Electron Devices
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1961
since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations
Metrics
Views
1961
since deposited on 2021-10-23
Acq. date: 2025-12-11
Citations