Publication:

Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate

Date

2016
Journal article
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dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLiang, Hu
dc.contributor.authorZhao, Ming
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T11:21:59Z
dc.date.available2021-10-23T11:21:59Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26745
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7387770
dc.source.beginpage997
dc.source.endpage1004
dc.source.issue3
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Performance optimization of Au-free lateral AlGaN/GaN schottky barrier diode with gated edge termination on 200-mm silicon substrate

dc.typeJournal article
dspace.entity.typePublication
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